paper

Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

arXiv:2509.18855 · doi:10.1186/s43074-025-00207-1

Abstract

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.

arXiv commentv2: AAM; licence: CC BY 4.0; Supplementary material is a part of this submission; Data necessary for replication of results are available in the Zenodo repository at https://doi.org/10.5281/zenodo.17357690

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