activity
20102026
most citedStoring magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

65 citations · 72 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.supr-con2026

Reversible field-free superconducting diode effect controlled by an antiferromagnet

Filip Krizek, Kamil Olejník, Tobias Edwinson +19

The semiconductor diode, which allows current to flow preferentially in one direction, is a fundamental building block of numerous modern electronic circuits. Its superconducting a…

cond-mat.mtrl-sci2026

Sign-resolved nanoscale readout and control of hidden antiferromagnetic spin order

A. Schmid, D. Siebenkotten, D. Dai +16

Antiferromagnetic memories promise ultrafast, stray-field-free information storage. Yet perfect magnetic compensation conceals the information carrier itself: the sign of the Néel…

cond-mat.mtrl-sci2024

Quench switching of Mn2As

Kamil Olejník, Zdeněk Kašpar, Jan Zubáč +10

We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagn…

physics.app-ph2024★ 1 cited

Neuromorphic information processing using ultrafast heat dynamics and quench switching of an antiferromagnet

Jan Zubáč, Miloslav Surýnek, Kamil Olejník +10

Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for se…

cond-mat.mtrl-sci2022★ 3 cited

Probing the Manipulation of Antiferromagnetic Order in CuMnAs Films Using Neutron Diffraction

Stuart F. Poole, Luke X. Barton, Mu Wang +7

We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppres…

cond-mat.mtrl-sci2016★ 3 cited

Antiferromagnetic multi-level memory cell

V. Schuler, K. Olejnik, X. Marti +9

Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external…

cond-mat.mes-hall2013★ 65 cited

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

D. Petti, E. Albisetti, H. Reichlová +13

Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Née…

cond-mat.mtrl-sci2010

Antiferromagnetic I-Mn-V semiconductors

T. Jungwirth, V. Novak, X. Marti +14

After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. R…