Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
arXiv:1302.3837 · doi:10.1063/1.4804429
Abstract
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
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- Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Cited by in corpus (26)
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- Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs
- Concepts of antiferromagnetic spintronics
- How to manipulate magnetic states of antiferromagnets
- Tunneling anisotropic magnetoresistance driven by magnetic phase transition
- Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
- Current induced torques in structures with ultra-thin IrMn antiferromagnet
- Compensated ferrimagnetic tetragonal Heusler thin films for antiferromagnetic spintronics
- Prospect for antiferromagnetic spintronics
- Observation of current-induced switching in non-collinear antiferromagnetic IrMn by differential voltage measurements
- Surface-termination dependent magnetism and strong perpendicular magnetocrystalline anisotropy of a FeRh (001) thin film: A density-functional study
- Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn
- Unraveling the influence of electronic and magnonic spin current injection near the magnetic ordering transition of IrMn metallic antiferromagnets
- Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet MnIr
- Relaxation mechanism driven by spin angular momentum absorption throughout antiferromagnetic phase transition in NiFe surface oxides
- Thermal Contribution in the Electrical Switching Experiments with Heavy Metal / Antiferromagnet Structures
- Electric control of antiferromagnets
- Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers
- Spin-transport, spin-torque and memory in antiferromagnetic devices: Part of a collection of reviews on antiferromagnetic spintronics
- Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions