Compensated ferrimagnetic tetragonal Heusler thin films for antiferromagnetic spintronics

Abstract

In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisotropy, and, hence, are ideal candidates for high density memory applications. Here, we demonstrate that a fully compensated magnetic state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga based tetragonal Heusler thin films. Furthermore, we show that a bilayer formed from a fully compensated and a partially compensated Mn-Pt-Ga layer, exhibits a large interfacial exchange bias up to room temperature. The present work establishes a novel design principle for spintronic devices that are formed from materials with similar elemental compositions and nearly identical crystal and electronic structures. Such devices are of significant practical value due to their improved properties such as thermal stability. The flexible nature of Heusler materials to achieve tunable magnetizations, and anisotropies within closely matched materials provides a new direction to the growing field of antiferromagnetic spintronics.

arXiv comment25 pages in Advanced Materials, 2016

References in corpus (7)

• Antiferromagnetic spintronics
• Room-temperature antiferromagnetic memory resistor
• Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias
• Large Anomalous Hall effect in a silicon-based magnetic semiconductor
• Large zero-field cooled exchange-bias in bulk Mn2PtGa
• Large Noncollinearity and Spin Reorientation in the Novel Mn2RhSn Heusler Magnet
• Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Cited by in corpus (13)

• Antiferromagnetic spintronics
• Discovery of Magnetic Antiskyrmions Beyond Room Temperature in Tetragonal Heusler Materials
• Heusler, Weyl, and Berry
• Heusler 4.0: Tunable Materials
• Manifestation of the Berry curvature in Co2TiSn Heusler films
• Revealing Controllable Anisotropic Magnetoresistance in Spin Orbit Coupled Antiferromagnet Sr2IrO4
• Ultrathin ferrimagnetic GdFeCo films with very low damping
• X-ray magnetic linear dichroism as a probe for non-collinear magnetic state in ferrimagnetic single layer exchange bias systems
• Room Temperature Magnetoresistance and Exchange Bias in "314 - type" Oxygen-Vacancy Ordered SrCo${}_{0.85}$Fe${}_{0.15}$O${}_{2.62}$
• First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn${}_2$RuGa
• Intra-unitcell cluster-cluster magnetic compensation and large exchange bias in cubic alloys
• Effect of Co Substitution on Ferrimagnetic Heusler compound Mn3Ga
• Fullerene antiferromagnetic reconstructed spinterface subsurface layer dominates multi-orbitals spin-splitting and large magnetic moment in C60