output
20162025
most citedCompensated ferrimagnetic tetragonal Heusler thin films for antiferromagnetic spintronics

61 citations

9 papers

cond-mat.soft2025★ 3 cited

Evaluation of the Influence of Structural Parameters on the Mechanical Properties of Foam Glasses via In-Situ Micro-CT Mechanical Testing

Mateus Gruener Lima, Tobias Günther, Thu Trang Võ +5

Foam glass made from waste glass has high chemical and mechanical stability and flexible structural properties, making it suitable for a wide range of applications. To ensure its r…

cond-mat.mtrl-sci2024★ 1 cited

Phase stability determination of negative thermal expansion silicates by theory and experiment

Andreas Erlebach, Ghada Belhadj Hassine, Christian Thieme +3

Materials that exhibit zero thermal expansion have numerous applications, ranging from everyday ceramic hobs to telescope mirrors to devices in optics and micromechanics. These mat…

cond-mat.mtrl-sci2024★ 4 cited

Thermomechanical properties of zero thermal expansion materials from theory and experiments

Andreas Erlebach, Christian Thieme, Carolin Müller +4

Origin and composition dependence of the anisotropic thermomechanical properties are elucidated for Ba1-xSrxZn2Si2O7 (BZS) solid solutions. The high-temperature phase of BZS shows…

cond-mat.mtrl-sci2023

Intermittent in-situ high-resolution X-ray microscopy of 400-nm porous glass under uniaxial compression: study of pore changes and crack formation

Sebastian Schäfer, François Willot, Mansoureh Norouzi Rad +3

The properties of porous glasses and their field of application strongly depend on the characteristics of the void space. Understanding the relationship between their porous struct…

cond-mat.mtrl-sci2023★ 15 cited

Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO-BiFeO multilayers

Johanna K. Jochum, Michael Lorenz, Haraldur P. Gunnlaugsson +7

Understanding the mechanisms of magnetoelectric (ME) coupling within multiferroic structures is paramount from a fundamental as well as an applied point of view. We report here tha…

physics.app-ph2022★ 10 cited

Study and characterization of GaN MOS capacitors: planar versus trench topographies

K. Mukherjee, C. De Santi, S. You +9

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…