92 citations · 395 across the 15 of their papers we have counts for
15 papers
Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
J. J. F. Heitz, L. Nádvorník, V. Balos +11
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by u…
Unidirectional magnetoresistance and spin-orbit torque in NiMnSb
J. Železný, Z. Fang, K. Olejník +9
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when…
Atomically sharp domain walls in an antiferromagnet
Filip Krizek, Sonka Reimers, Zdeněk Kašpar +18
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to application…
Current-induced fragmentation of antiferromagnetic domains
M. S. Wörnle, P. Welter, Z. Kašpar +7
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in…
Molecular beam epitaxy of CuMnAs
Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka +13
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth…
Fast optical control of spin in semiconductor interfacial structures
L. Nádvorník, M. Surýnek, K. Olejník +5
We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and…
Efficient conversion of light to charge and spin in Hall-bar microdevice
L. Nádvorník, J. A. Haigh, K. Olejník +4
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. I…
Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction
L. Nádvorník, K. Olejník, P. Němec +5
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. I…
Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer
L. Nádvorník, P. Němec, T. Janda +8
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercializ…
Electrical detection of magnetization reversal without auxiliary magnets
K. Olejník, V. Novák, J. Wunderlich +1
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memo…
Current induced torques in structures with ultra-thin IrMn antiferromagnet
H. Reichlová, D. Kriegner, V. Holý +8
Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we repo…
Disentangling relativistic spin torques in a ferromagnet/semiconductor bilayer
T. D. Skinner, K. Olejník, L. K. Cunningham +5
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of elect…
Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
D. Petti, E. Albisetti, H. Reichlová +13
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Née…
Strain control of magnetic anisotropy in (Ga,Mn)As microbars
C. King, J. Zemen, K. Olejník +8
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive la…
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
A. W. Rushforth, K. Výborný, C. S. King +11
We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield dir…