Prospect for antiferromagnetic spintronics
arXiv:1506.07507 · doi:10.1109/TMAG.2014.2358939
Abstract
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. Current spintronics relies primarily on ferromagnets while antiferromagnets have traditionally played only a supporting role. Recently, antiferromagnets have been revisited as potential candidates for the key active elements in spintronic devices. In this paper we review approaches that have been employed for reading, writing, and storing information in antiferromagnets.
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Cited by in corpus (11)
- How to manipulate magnetic states of antiferromagnets
- Ultrafast generation and dynamics of isolated skyrmions in antiferromagnetic insulators
- Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
- Magnon-induced superconductivity in a topological insulator coupled to ferro- and antiferromagnetic insulators
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- Spin transfer and spin pumping in disordered normal metal-antiferromagnetic insulator systems
- Spin Hall Effects in Antiferromagnets
- Single crystal studies and electronic structure investigation of a room-temperature semiconductor NaMnAs
- Ultra-Fast Ferrimagnetic All Spin Logic Device