Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Abstract

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr${}_2$O${}_3$ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr${}_2$O${}_3$ the maximal mobility of 0.1 m/(s$\times$Oe) is reached at $E\approx 0.06$ V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr${}_2$O${}_3$. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s$\times$Oe) can then be achieved at $E=0.2$ V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.

5 pages, 2 figures, revised and corrected version, accepted in Applied Physics Letters

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• Influence of strain and chemical substitution on the magnetic anisotropy of antiferromagnetic Cr${}_2$O${}_3$: an ab-initio study
• Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures
• Magnetoelectric control of topological phases in graphene
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• Dynamics of Magnetoelectric Reversal of Antiferromagnetic Domain
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