Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Abstract

We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.

References in corpus (7)

• Antiferromagnetic spintronics
• Electrical switching of an antiferromagnet
• Relativistic Neel-order fields induced by electrical current in antiferromagnets
• Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
• In-plane electronic anisotropy in underdoped Ba(Fe${}_{1-x}$Co${}_x$)${}_2$As${}_2$ revealed by detwinning in a magnetic field
• Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks
• Current induced torques in structures with ultra-thin IrMn antiferromagnet

Cited by in corpus (5)

• Antiferromagnetic spintronics
• How to manipulate magnetic states of antiferromagnets
• Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn${}_3$Ir thin films
• Imprint from ferromagnetic skyrmions in an antiferromagnet via exchange bias
• Local setting of spin textures in a granular antiferromagnet