Photoluminescence pressure coefficients of InAs/GaAs quantum dots

Abstract

We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within the ``strained linear combination of bulk bands'' approach. Our results confirm the experimentally observed significant reductions of the band gap pressure coefficients from the bulk values. We show that the nonlinear pressure coefficients of the bulk InAs and GaAs are responsible for these reductions. We also find a rough universal pressure coefficient versus band gap relationship which agrees quantitatively with the experimental results. We find linear relationships between the percentage of electron wavefunction on the GaAs and the quantum dot band gaps and pressure coefficients. These linear relationships can be used to get the information of the electron wavefunctions.

arXiv comment8 pages, 2 tables, 4 figures

References in corpus (3)

• Comparison of two methods for describing the strain profiles in quantum dots
• Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
• Correlation versus mean-field contributions to excitons, multi-excitons, and charging energies in semiconductor quantum dots

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• Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure