activity
20112017
most citedOptical spin injection and spin lifetime in Ge heterostructures

103 citations · 243 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2017★ 35 cited

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello +6

Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semico…

cond-mat.mtrl-sci2016★ 36 cited

Giant g factor tuning of long-lived electron spins in Ge

Anna Giorgioni, Stefano Paleari, Stefano Cecchi +5

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrast…

cond-mat.mtrl-sci2016★ 21 cited

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

F. Pezzoli, A. Giorgioni, K. Gallacher +9

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si subst…

cond-mat.mtrl-sci2015★ 13 cited

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

E. Vitiello, M. Virgilio, A. Giorgioni +7

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to…

cond-mat.mtrl-sci2013

Germanium crystals on silicon show their light

F. Pezzoli, F. Isa, G. Isella +8

Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by str…

cond-mat.mtrl-sci2013★ 35 cited

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

F. Pezzoli, L. Qing, A. Giorgioni +4

Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control ov…

cond-mat.mtrl-sci2011★ 103 cited

Optical spin injection and spin lifetime in Ge heterostructures

F. Pezzoli, F. Bottegoni, D. Trivedi +9

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…