High resolution coherent population trapping on a single hole spin in a semiconductor

Abstract

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify this process as charge noise by, first, demonstrating that the hole spin g-factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.

References in corpus (8)

• Charge noise and spin noise in a semiconductor quantum device
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Coherent Population Trapping of an Electron Spin in a Single Negatively Charged Quantum Dot
• Observation of extremely slow hole spin relaxation in self-assembled quantum dots
• Fast optical preparation, control and read-out of single quantum dot spin
• Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy
• A Charge and Spin Readout Scheme For Single Self-Assembled Quantum Dots
• Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

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