Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

Abstract

We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization, but find these effects to be much weaker than in experiments that use electron spin resonance and related experiments with quantum dots.

4 pages, 4 figures; Improved analysis of data in Fig. 3, corrected factors of 2 and pi

References in corpus (7)

• Long-distance quantum communication with atomic ensembles and linear optics
• Ultrafast optical rotations of electron spins in quantum dots
• Confluence of resonant laser excitation and bi-directional quantum dot nuclear spin polarization
• Locking electron spins into magnetic resonance by electron-nuclear feedback
• Coherent Population Trapping of Electron Spins in a Semiconductor
• Ultrafast optical spin echo for electron spins in semiconductors
• Ultrafast control of donor-bound electron spins with single detuned optical pulses

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• Two-laser dynamic nuclear polarization with semiconductor electrons: feedback, suppressed fluctuations, and bistability near two-photon resonance
• Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
• Electron Spin Dephasing and Optical Pumping of Nuclear Spins in GaN