A unipolar quantum dot diode structure for advanced quantum light sources
arXiv:2301.03541 · doi:10.1021/acs.nanolett.3c01658
Abstract
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel nin diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the observed charged states. Blinking-free single-photon emission and high two-photon indistinguishability is observed. The linewidth's temporal evolution is investigated for timescales spanning more than orders of magnitude, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of and ). No spectral diffusion or decoherence on timescales above is observed for most of the dots, and the emitted photons' linewidth deviates from the Fourier-transform limit only by a factor of . Thus, for remote TPI experiments, visibilities above are anticipated. The presence of n-doping only signifies higher available carrier mobility, making the presented device highly attractive for future development of high-speed tunable, high-performance quantum light sources.
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