Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
arXiv:cond-mat/0006008 · doi:10.1063/1.127038
Abstract
Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf-SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (~0.1pA).
4 pages, 4 figures, to be published in Appl. Phys. Lett
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Cited by in corpus (31)
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