Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Abstract

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf-SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf-SET, displacement sensitivities of $10^{-6}\mathring{\mathrm{A}}/\sqrt{\mathrm{Hz}}$ may be possible.

12 pages, 3 figures

References in corpus (1)

• Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

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