Noise properties of two single electron transistors coupled by a nanomechanical resonator

Abstract

We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find that the SETs act on the resonator like two independent heat baths. The coupling to the resonator generates positive correlations in the currents flowing through each of the SETs as well as between the two currents. In the regime where the dynamics of the resonator is dominated by the back-action of the SETs, these positive correlations can lead to parametrically large enhancements of the low frequency current noise. These noise properties can be understood in terms of the effects on the SET currents of fluctuations in the state of a resonator in thermal equilibrium which persist for times of order the resonator damping time.

arXiv commentAccepted for publication in Phys. Rev. B

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• Noise spectrum of a tunnel junction coupled to a nanomechanical oscillator
• Transport properties of a superconducting single-electron transistor coupled to a nanomechanical oscillator
• Conditional spin counting statistics as a probe of Coulomb interaction and spin-resolved bunching