Charge transport through a SET with a mechanically oscillating island

Abstract

We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island vibrations may strongly influence the current-voltage characteristics, current noise, and higher cumulants of the current. Harmonic oscillations of the island and oscillations with random amplitude (e.g., due to the thermal activation) change the transport characteristics in a different way. The noise spectrum has a peak at the frequency of the island oscillations; when the island oscillates harmonically, the peak reduces to a $\delta$-peak. We show that knowledge of the SET transport properties helps to determine in what way the island oscillates, to estimate the amplitude, and the frequency of the oscillations.

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• Probing tiny motions of nanomechanical resonators: classical or quantum mechanical?
• Cooling mechanisms in molecular conduction junctions
• Probing the charge of a quantum dot with a nanomechanical resonator
• Green function techniques in the treatment of quantum transport at the molecular scale
• The charge shuttle as a nanomechanical ratchet
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• Proposal for a nanomechanical qubit
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• Non-Markovian dynamics of a nanomechanical resonator measured by a quantum point contact
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• Charge-vibration interaction effects in normal-superconductor quantum dots
• Noise properties of two single electron transistors coupled by a nanomechanical resonator
• Non-linear dynamics of a driven nanomechanical single electron transistor
• Mechanically probing coherent tunnelling in a double quantum dot
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• Sensitivity of the mixing current technique to detect nano-mechanical motion
• Strong vibration nonlinearity in semiconductor-based nanomechanical systems
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• Dynamics of Shuttle Devices
• Multiscale Modeling of a Nanoelectromechanical Shuttle
• Conductance of a SET with a retarded dielectric layer in the gate capacitor
• The effect of noise fluctuation of a quantum tunneling device coupled to a substrate