Fractional quantum conductance staircase of edge hole channels in silicon quantum wells

Abstract

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, Gxx, as a function of the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

7 pages and 4 figures

References in corpus (8)

• Topological Insulators
• Topological insulators and superconductors
• Quantum supercurrent transistors in carbon nanotubes
• Ge/Si nanowire mesoscopic Josephson junctions
• Ballistic transport in induced one-dimensional hole systems
• Phase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings
• Superperiods and quantum statistics of Laughlin quasiparticles
• Fractional quantization of ballistic conductance in 1D hole systems