Electrically detected magnetic resonance using radio-frequency reflectometry

Abstract

The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.

9 pages, 3 figures

References in corpus (6)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical detection of spin echoes for phosphorus donors in silicon
• Long spin coherence in silicon with an electrical spin trap readout
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Cited by in corpus (4)

• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
• Real Time Electrical Detection of Coherent Spin Oscillations
• Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs