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Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qub…
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden…
Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
Muhammad Usman, Charles D. Hill, Rajib Rahman +4
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking…
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan +5
An atomistic method of calculating the spin-lattice relaxation times () is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes int…