1.2k citations · 3k across the 33 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 7 cited
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…
cond-mat.mes-hall2017★ 24 cited
Two-electron states of a group V donor in silicon from atomistic full configuration interaction
Archana Tankasala, Joseph Salfi, Juanita Bocquel +7
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight…