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Stark tuning of the charge states of a two-donor molecule in silicon
Rajib Rahman, Seung H. Park, Gerhard Klimeck +1
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed…
Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
Rajib Rahman, Seung H. Park, Timothy B. Boykin +3
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spin…
Orbital Stark effect and quantum confinement transition of donors in silicon
Rajib Rahman, G. P. Lansbergen, Seung H. Park +4
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid…
Atomistic simulations of adiabatic coherent electron transport in triple donor systems
Rajib Rahman, Seung H. Park, Jared H. Cole +4
A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with expone…
Mapping donor electron wave function deformations at sub-Bohr orbit resolution
Seung H. Park, Rajib Rahman, Gerhard Klimeck +1
Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central…