1.2k citations · 3k across the 33 of their papers we have counts for
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Varied magnetic phases in a van der Waals easy-plane antiferromagnet revealed by nitrogen-vacancy center microscopy
A. J. Healey, S. Rahman, S. C. Scholten +7
Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin co…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Two-electron states of a group V donor in silicon from atomistic full configuration interaction
Archana Tankasala, Joseph Salfi, Juanita Bocquel +7
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight…
Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qub…
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden…
Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
Muhammad Usman, Charles D. Hill, Rajib Rahman +4
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking…
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan +5
An atomistic method of calculating the spin-lattice relaxation times () is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes int…
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi +5
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the centr…
Spatially Resolving Valley Quantum Interference of a Donor in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real…
Silicon Quantum Electronics
Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello +6
This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have oc…
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of e…
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experim…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…
Coherent electron transport by adiabatic passage in an imperfect donor chain
Rajib Rahman, Richard P. Muller, James E. Levy +4
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechan…
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silico…
Single-shot readout of an electron spin in silicon
Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg +12
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for th…
Stark tuning of the charge states of a two-donor molecule in silicon
Rajib Rahman, Seung H. Park, Gerhard Klimeck +1
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed…
Orbital Stark effect and quantum confinement transition of donors in silicon
Rajib Rahman, G. P. Lansbergen, Seung H. Park +4
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid…
Atomistic simulations of adiabatic coherent electron transport in triple donor systems
Rajib Rahman, Seung H. Park, Jared H. Cole +4
A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with expone…