activity
20062020
most citedHigh precision quantum control of single donor spins in silicon

119 citations · 293 across the 6 of their papers we have counts for

collaborators

6 papers

physics.ed-ph2020★ 5 cited

A pandemic-resilient open-inquiry physical science lab course which leverages the Maker movement

F. R. Bradbury, C. F. J. Pols

Without any major changes, a pilot version of a physical science lab course was able to continue when the COVID-19 crisis necessitated the abrupt suspension of on-campus education.…

cond-mat.mes-hall2011★ 3 cited

Spatial distribution of electrons on a superfluid helium charge-coupled device

Maika Takita, F. R. Bradbury, T. M. Gurrieri +4

Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing a…

cond-mat.other2011★ 51 cited

Extremely efficient clocked electron transfer on superfluid helium

F. R. Bradbury, Maika Takita, T. M. Gurrieri +4

Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to cons…

cond-mat.other2007★ 29 cited

Signal and Charge Transfer Efficiency of Few Electrons Clocked on Microscopic Superfluid Helium Channels

G. Sabouret, F. R. Bradbury, S. Shankar +1

Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states,…

quant-ph2007★ 119 cited

High precision quantum control of single donor spins in silicon

Rajib Rahman, Cameron J. Wellard, Forrest R. Bradbury +4

The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Mi…

cond-mat.mtrl-sci2006★ 86 cited

Stark Tuning of Donor Electron Spins in Silicon

Forrest R. Bradbury, Alexei M. Tyryshkin, Guillaume Sabouret +3

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-laye…