Intervalley splittings of Si quantum wells

Abstract

Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the valley splitting caused by the quantum well interface in the previous work [Ref. 10], can be derived self-consistently from the multi-valley effective mass theory. Finite element method is used to solve the multi-valley effective equations. Theoretical predictions are in a reasonably good agreement with the recent experimental observation of valley splitting in a SiO_{2}/Si/SiO_{2} quantum well, which prove the validity of our approach.

Major revision including the correction of numerical errors

References in corpus (8)

• Controllable valley splitting in silicon quantum devices
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Valley splitting in strained silicon quantum wells
• Valley Polarization in Si(100) at Zero Magnetic Field
• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Theory of the Stark Effect for P donors in Si
• Strong enhancement of the valley splitting in a 2D electron system in silicon
• Inter-valley interactions in Si quantum dots