264 citations · 398 across the 9 of their papers we have counts for
9 papers
Transport spectroscopy of a single dopant in a gated silicon nanowire
H. Sellier, G. P. Lansbergen, J. Caro +5
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic sta…
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
H. Sellier, G. P. Lansbergen, J. Caro +5
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consi…
Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons
V. I. Kozub, J. Caro
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the…
Stark effect of shallow impurities in Si
G. D. J. Smit, S. Rogge, J. Caro +1
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the l…
Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier
J. Caro, I. D. Vink, G. D. J. Smit +2
We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the…
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
G. D. J. Smit, S. Rogge, J. Caro +1
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room tem…