Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

Abstract

We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3e-6 e/Hz^(1/2) over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7e13 Hz^(3/2)/e, which is by one order of magnitude better than for typical RF-SETs.

4 pages, 3 figures

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• An ultra sensitive radio frequency single electron transistor working up to 4.2 K
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Cited by in corpus (5)

• Charge and spin state readout of a double quantum dot coupled to a resonator
• Measuring the complex admittance of a carbon nanotube double quantum dot
• Charge sensitivity enhancement via mechanical oscillation in suspended carbon nanotube devices
• Thermal shot noise in top-gated single carbon nanotube field effect transistors
• Fast and Ultrasensitive Electrometer Operating at the Single-Photon Level