250 citations · 695 across the 5 of their papers we have counts for
6 papers
Background charges and quantum effects in quantum dots transport spectroscopy
M. Pierre, M. Hofheinz, X. Jehl +4
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in man…
Microwave Dielectric Loss at Single Photon Energies and milliKelvin Temperatures
Aaron D. O'Connell, M. Ansmann, R. C. Bialczak +9
The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss t…
High-fidelity gates in a Josephson qubit
Erik Lucero, M. Hofheinz, M. Ansmann +7
We demonstrate new experimental procedures for measuring small errors in a superconducting quantum bit (qubit). By carefully separating out gate and measurement errors, we construc…
1/f Flux Noise in Josephson Phase Qubits
Radoslaw C. Bialczak, R. McDermott, M. Ansmann +8
We present a new method to measure 1/f noise in Josephson quantum bits (qubits) that yields low-frequency spectra below 1Hz. Comparison of noise taken at positive and negative bias…
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
M. Hofheinz, X. Jehl, M. Sanquer +3
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect trans…
Size scaling of the addition spectra in silicon quantum dots
M. Bohm, M. Hofheinz, X. Jehl +6
We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were record…