activity
20092023
most citedPolarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

93 citations · 305 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2023★ 41 cited

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez +4

The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach.…

physics.app-ph2021★ 70 cited

Epitaxial ScAlN on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial ScAlN thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity () values relative to AlN.…

math.OC2020★ 6 cited

Optimization methods for achieving high diffraction efficiency with perfect electric conducting gratings

Rubén Aylwin, Gerardo Silva-Oelker, Carlos Jerez-Hanckes +1

This work presents the implementation, numerical examples and experimental convergence study of first- and second-order optimization methods applied to one-dimensional periodic gra…

cond-mat.mes-hall2016★ 21 cited

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil +10

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry se…

cond-mat.mes-hall2016★ 59 cited

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

Jimy Encomendero, Faiza Afroz Faria, S. M. Islam +5

Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tun…

cond-mat.mes-hall2015

Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions

Xiaodong Yan, Wenjun Li, S. M. Islam +4

By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling cur…