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cond-mat.mtrl-sci2010★ 93 cited
Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena, John Simon, Albert +12
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abr…
cond-mat.mtrl-sci2009
Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
J. Simon, Z. Zhang, K. Goodman +3
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap Ga…