activity
20182024
most citedCharacterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures

127 citations · 206 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2024★ 15 cited

Gatemon qubit on a germanium quantum-well heterostructure

Elyjah Kiyooka, Chotivut Tangchingchai, Leo Noirot +9

Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an alumi…

cond-mat.mes-hall2024★ 5 cited

Optimal operation of hole spin qubits

Marion Bassi, Esteban-Alonso Rodrıguez-Mena, Boris Brun +11

Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing…

cond-mat.mes-hall2024★ 4 cited

Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator

Victor Champain, Simon Zihlmann, Alessandro Chessari +11

In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan…

quant-ph2021★ 3 cited

Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor

L. Le Guevel, G. Billiot, S. De Franceschi +4

In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing numbe…

cond-mat.mes-hall2019★ 19 cited

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Léo Bourdet, Louis Hutin, Benoit Bertrand +14

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…

cond-mat.mes-hall2019★ 4 cited

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion +20

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…