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cond-mat.mtrl-sci2010★ 27 cited
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
cond-mat.mtrl-sci2002★ 17 cited
Characterization of one-dimensional quantum channels in InAs/AlSb
C. H. Yang, M. J. Yang, K. A. Cheng +1
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofab…