A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor

Abstract

A multiscale simulation method is developed to model a quantum dot (QD) array of germanium (Ge) holes for quantum computing. Guided by three-dimensional numerical quantum device simulations of QD structures, an analytical model of the tunnel coupling between the neighboring hole QDs is obtained. Two-qubit entangling quantum gate operations and quantum circuit characteristics of the QD array processor are then modeled. Device analysis of two-qubit Ge hole quantum gates demonstrates faster gate speed, smaller process variability, and less stringent requirement of feature size, compared to its silicon counterpart. The multiscale simulation method allows assessment of the quantum processor circuit performance from a bottom-up, physics-informed perspective. Application of the simulation method to the Ge QD array processor indicates its promising potential for preparing high-fidelity ansatz states in quantum chemistry simulations.

9 pages, 8 figures

References in corpus (7)

• Supplementary information for "Quantum supremacy using a programmable superconducting processor"
• Spin qubits in graphene quantum dots
• Spin relaxation and decoherence of holes in quantum dots
• Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps
• Computational Assessment of Silicon Quantum Gate Based on Detuning Mechanism for Quantum Computing