In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits
arXiv:2408.16660 · doi:10.1126/sciadv.adt8586
Abstract
The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here we perform scanning gate microscopy on a live superconducting quantum circuit at millikelvin temperatures to locate individual TLS. Our method directly reveals the microscopic nature of TLS and is also capable of deducing the three dimensional orientation of individual TLS electric dipole moments. Such insights, when combined with structural information of the underlying materials, can help unravel the detailed microscopic nature and chemical origin of TLS, directing strategies for their eventual mitigation.
References in corpus (29)
- Theoretical perspective on the glass transition and amorphous materials
- Towards understanding two-level-systems in amorphous solids -- Insights from quantum circuits
- High cooperativity coupling of electron-spin ensembles to superconducting cavities
- Decoherence in Josephson Qubits from Junction Resonances
- Fluctuations of Energy-Relaxation Times in Superconducting Qubits
- Surface loss simulations of superconducting coplanar waveguide resonators
- Observation of directly interacting coherent two-level systems in a solid
- Electric field spectroscopy of material defects in transmon qubits
- Two-level systems in superconducting quantum devices due to trapped quasiparticles
- Suppression of 1/f noise in solid state quantum devices by surface spin desorption
- Decoherence spectroscopy with individual two-level tunneling defects
- Bulk and Surface Tunneling Hydrogen Defects in Alumina
- Projected dipole moments of individual two-level defects extracted using circuit quantum electrodynamics
- On the properties of superconducting planar resonators at mK temperatures
- Analysis of high quality superconducting resonators: consequences for TLS properties in amorphous oxides
- The "Tunneling Two-Level Systems" Model of the Low-Temperature Properties of Glasses: Are "Smoking-Gun" Tests Possible?
- Fast tunable high Q-factor superconducting microwave resonators
- Resolving the positions of defects in superconducting quantum bits
- Probing defect densities at the edges and inside Josephson junctions of superconducting qubits
- Quantum Sensors for Microscopic Tunneling Systems
- Simulating the fabrication of aluminium oxide tunnel junctions
- A near-field scanning microwave microscope based on a superconducting resonator for low power measurements
- Magnetic imaging of superconducting qubit devices with scanning SQUID-on-tip
- Hydrogen as a Source of Flux Noise in SQUIDs
- Cryogen-free scanning gate microscope for the characterization of Si/SiGe quantum devices at milli-Kelvin temperatures
- Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
- Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of noise in high-quality qubits
- Spin echo silencing using a current-biased frequency-tunable resonator
- Quantum defects from single surface exhibit strong mutual interactions