Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films

Abstract

Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd${}_3$As${}_2$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd${}_3$As${}_2$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd${}_3$As${}_2$ films adopting molecular beam epitaxy. The highest electron mobility ($\mu$ = 3 $\times$ 10${}^4$ cm${}^2$/Vs) among the reported film samples has been achieved at a low carrier density ($\text{n}=5$ $\times$ 10${}^{16}$ cm${}^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\text{t}=120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation.

arXiv comment11 pages, 3 figures + supplementary 6 pages, 3 figures

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