Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films

Abstract

Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd${}_2$As${}_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase in the ferromagnetic state, however, transport properties of low-carrier density samples have remained elusive. Here we report molecular beam epitaxy growth of EuCd${}_2$As${}_2$ films, achieving low-hole density in the range of $10^{15}$-$10^{16}$ cm${}^{-3}$ at low temperature. Transport measurements of such low-carrier density films reveal an insulating behavior with an activation gap of about 200 meV, which persists even in the field-induced ferromagnetic state. Our work provides an important experimental clue that EuCd${}_2$As${}_2$ is intrinsically insulating, contrary to the previous prediction.

arXiv comment12 pages, 3 figures

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Cited by in corpus (6)

• Manipulating magnetism and transport properties of EuCd${}_2$P${}_2$ with a low carrier concentration
• Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping
• Stark difference in the in-plane anomalous Hall response in Zintl compounds EuA2Sb2 (A = Zn, Cd) thin films
• Recent advances in understanding and manipulating magnetic and electronic properties of Eu$M_2{X}_2$ ($M$ = Zn, Cd; $X$ = P, As)
• Doping Topological Dirac Semimetal with magnetic impurities: electronic structure of Mn-doped Cd${}_3$As${}_2$
• Magnetic structure of EuZn${}_2$Sb${}_2$ single-crystal thin-film