Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
arXiv:2204.06880 · doi:10.1103/PhysRevB.105.L201101
Abstract
Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCdSb provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCdSb single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.
13 pages, 4 figures
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Cited by in corpus (11)
- Observation of in-plane anomalous Hall effect associated with orbital magnetization
- Manipulating magnetism and transport properties of EuCdP with a low carrier concentration
- Field-tunable Weyl points and large anomalous Hall effects in degenerate magnetic semiconductor EuMgBi
- Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films
- Berry curvature derived negative magnetoconductivity observed in type-II magnetic Weyl semimetal films
- Stark difference in the in-plane anomalous Hall response in Zintl compounds EuA2Sb2 (A = Zn, Cd) thin films
- Recent advances in understanding and manipulating magnetic and electronic properties of Eu ( = Zn, Cd; = P, As)
- Topological Hall effect enhanced at magnetic transition fields in a frustrated magnet EuCd
- Origin of the large topological Hall effect in the EuCdSb antiferromagnet
- Magneto-cubic and magneto-linear dependence observed in an in-plane anomalous Hall magnet
- Magnetic structure of EuZnSb single-crystal thin-film