Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3
arXiv:1804.06312 · doi:10.1038/s41598-018-20758-7
Abstract
Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate.
arXiv comment10 pages, 4 figures
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Cited by in corpus (13)
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- Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films
- Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films
- Ferromagnetic state above room temperature in a proximitized topological Dirac semimetal
- Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them
- Enhancement of spin-orbit coupling in Dirac semimetal CdAs films by Sb-doping
- Plasmon Fizeau drag in 3D Dirac and Weyl semimetals
- Doping-induced topological transition and enhancement of thermopower in the Dirac-semimetal system CdZnAs
- Pressure-induced reconstructive phase transition in CdAs
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- Edge and bulk states in Weyl-orbit quantum Hall effect as studied by Corbino measurements