Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

Abstract

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we have revealed the strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

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Cited by in corpus (4)

• Semiconductor materials stacks for quantum dot spin qubits
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Symmetry analysis of strain, electric and magnetic fields in the ${\text{Bi}}_2{\text{Se}}_3$-class of topological insulators
• Self-assembled nano-columns in Bi2Se3 grown by molecular beam epitaxy