activity
20142019
most citedDense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

211 citations · 718 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2019

Quantum Confined Tomonaga-Luttinger Liquid in MoSe2 Twin Domain Boundaries

Yipu Xia, Junqiu Zhang, Yuanjun Jin +3

There have been conflicting reports on the electronic properties of twin domain boundaries (DBs) in MoSe2 monolayer, including the quantum well states, charge density wave, and Tom…

cond-mat.mes-hall2017★ 120 cited

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Jin-Peng Xu, Jun-Qiu Zhang, Hao Tian +3

Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor sho…

cond-mat.mtrl-sci2017

Ultrathin layers of beta-tellurene grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Jinglei Chen, Yawei Dai, Yaqiang Ma +3

Monolayer Tellurium (Te) or tellurene has been suggested by a recent theory as a new two-dimensional (2D) system with great electronic and optoelectronic promises. Here we present…

cond-mat.mtrl-sci2016★ 66 cited

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Jinglei Chen, Guanyong Wang, Yanan Tang +5

Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as the hexagonal (2H) and distorted octahedral or monoclinic (1T') phases. The different structures…

cond-mat.mtrl-sci2016

Induced robust topological order on an ordinary insulator hetero-structured with a strong topological insulator

Bin Li, Qiangsheng Lu, Shuigang Xu +5

Topological states of matter originate from distinct topological electronic structures of materials. As for strong topological insulators (STIs), the topological surface (interface…

cond-mat.mtrl-sci2016★ 15 cited

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

B. Li, W. G. Chen, X. Guo +4

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in e…