Field Effect Magnetization Reversal in Ferromagnetic Semiconductor Quantum Wells
arXiv:cond-mat/0106536 · doi:10.1103/PhysRevB.65.193311
Abstract
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier induced ferromagnetism in Mn-doped quantum wells and on a semi-phenomenological description of the host II-VI semiconductor valence bands.
5 pages, 4 figures
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