Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
arXiv:0804.3324 · doi:10.1103/PhysRevLett.101.135502
Abstract
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.
4 pages, 3 figures
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- From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins