Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration

Abstract

The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.

4 pages, 3 figures

References in corpus (4)

• Origin and control of high-temperature ferromagnetism in semiconductors
• Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
• Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
• Hole states in wide band-gap diluted magnetic semiconductors and oxides

Cited by in corpus (2)

• Optimization of Mn Doping in Group-IV-based Dilute Magnetic Semiconductors by Electronic Co-dopants
• Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties