Magnetotransport in phase-separated (Ga,Fe)N with $\gamma$'-Ga${}_y$Fe${}_{4-y}$N nanocrystals

Abstract

The magnetotransport in phase-separated (Ga,Fe)N containing $\gamma$'-Ga${}_y$Fe${}_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $\gamma$'-Fe${}_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.

arXiv comment10 pages, 8 figures

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• Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe${}_y$N Nanocrystals Embedded in GaN
• A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers
• Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
• Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb