Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN

A. Navarro-Quezada; K. Gas; T. Truglas; V. Bauernfeind; M. Matzer; D. Kreil; A. Ney; H. Groiss; M. Sawicki; A. Bonanni

doi:10.3390/ma13153294

paper

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_{y}$ N Nanocrystals Embedded in GaN

arXiv:2001.07375 · doi:10.3390/ma13153294

Abstract

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga $δ$ FeN layers with Fe $_{y}$ N embedded nanocrystals (NCs) \textit{via} Al $_{x}$ Ga $_{1 - x}$ N buffers with different Al concentration $0 < x_{Al} < 41$ \% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $ε$ -Fe $_{3}$ N NCs takes place. Already at an Al concentration $x_{Al}$ \, $\approx$ \,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$ '-Ga $_{y}$ Fe $_{4 - y}$ N nanocrystals in the layer on the $x_{Al} = 0%$ buffer lies in-plane, the easy axis of the $ε$ -Fe $_{3}$ N NCs in all samples with Al $_{x}$ Ga $_{1 - x}$ N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

29 pages, 10 figures, submitted

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_{y}$ N Nanocrystals Embedded in GaN

Abstract

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Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fey​N Nanocrystals Embedded in GaN

Abstract

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Cited by in corpus (9)

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_{y}$ N Nanocrystals Embedded in GaN