Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe${}_y$N Nanocrystals Embedded in GaN

Abstract

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$\delta$FeN layers with Fe${}_y$N embedded nanocrystals (NCs) \textit{via} Al${}_x$Ga${}_{1-x}$N buffers with different Al concentration $0<x_{\mathrm{Al}}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\epsilon$-Fe${}_3$N NCs takes place. Already at an Al concentration $x_{\mathrm{Al}}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $\gamma$'-Ga${}_y$Fe${}_{4-y}$N nanocrystals in the layer on the $x_{\mathrm{Al}}=0\%$ buffer lies in-plane, the easy axis of the $\epsilon$-Fe${}_3$N NCs in all samples with Al${}_x$Ga${}_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

arXiv comment29 pages, 10 figures, submitted

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• Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe${}_y$N Nanocrystals Embedded in GaN
• A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers
• Magnetic properties of wurtzite (Ga,Mn)As
• Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr
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• Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors
• From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins
• Reliable Magnetometry for Antiferromagnets and Thin Films: Correcting Substrate Artifacts in Mn3Sn/MgO Systems