Structural properties of Co${}_2$TiSi films on GaAs(001)

Abstract

Co${}_2$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13~nm these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found \textit{L$2_1$} and \textit{B}2 ordered regions, however the [Co]/[Ti]--ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic \textit{B}2--ordering with the best order parallel to the axes of the columns.

References in corpus (3)

• Ab initio prediction of half-metallic properties for the ferromagnetic Heusler alloys Co${}_2$MSi (M=Ti, V, Cr)
• Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
• Data Storage: Review of Heusler Compounds