131 citations · 451 across the 20 of their papers we have counts for
22 papers
Polarity-induced selective area epitaxy of GaN nanowires
Ziani de Souza Schiaber, Gabriele Calabrese, Xiang Kong +6
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assis…
Lattice matched Volmer-Weber growth of FeSi on GaAs(001) -- the influence of the growth rate
B Jenichen, Z Cheng, M Hanke +2
We investigate the formation of lattice matched single-crystalline FeSi/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the e…
Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons
B Jenichen, U Jahn, A Nikulin +3
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a c…
Nucleation at the phase transition near 40~C in MnAs nanodisks
B Jenichen, Y Takagaki, K H Ploog +3
The phase transition near 40~C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the s…
Characterization of L21 order in Co2FeSi thin films on GaAs
B Jenichen, T Hentschel, J Herfort +3
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffr…
Long-range order and thermal stability of thin CoFeSi films on GaAs(111)B
B Jenichen, J Herfort, K Kumakura +1
CoFeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The CoFeSi fi…
Structural properties of CoTiSi films on GaAs(001)
B Jenichen, J Herfort, M Hanke +6
CoTiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray dif…
Ordered structure of FeGe formed during solid-phase epitaxy
B Jenichen, M Hanke, S Gaucher +7
FeSi/Ge(Fe,Si)/FeSi thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on FeSi). The stacks were analyzed using el…
Ab initio and nuclear inelastic scattering studies of FeSi/GaAs heterostructures
O. Sikora, J. Kalt, M. Sternik +11
The structure and dynamical properties of the FeSi/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stabilit…
Ferromagnet/Semiconductor/Ferromagnet Hybrid Trilayers grown using solid phase epitaxy
Samuel Gaucher, Bernd Jenichen, Jens Herfort
The direct growth of semiconductors over metals by molecular beam epitaxy is a difficult task due to the large differences in crystallization energy between these types of material…
Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study
Vladimir M. Kaganer, Bernd Jenichen, Oliver Brandt
The coalescence in dense arrays of spontaneously formed GaN nanowires proceeds by bundling: adjacent nanowires bend and merge at their top, thus reducing their surface energy at th…
Diffraction at GaAs/FeSi core/shell nanowires: the formation of nanofacets
Bernd Jenichen, Michael Hanke, Maria Hilse +3
GaAs/FeSi core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfa…
Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)
Bernd Jenichen, Uwe Jahn, Andrei Nikulin +2
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe…
Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film
K. -M. Dantscher, D. A. Kozlov, P. Olbrich +12
We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm stra…
Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)
Bernd Jenichen, Maria Hilse, Jens Herfort +1
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microsco…
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S. Fernández-Garrido, V. M. Kaganer, C. Hauswald +5
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the…
Real structure of lattice matched GaAs-Fe3Si core-shell nanowires
Bernd Jenichen, Maria Hilse, Jens Herfort +1
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microsco…
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Benjamin Wilsch, Uwe Jahn, Bernd Jenichen +2
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray…
Macro- and micro-strain in GaN nanowires on Si(111)
Bernd Jenichen, Oliver Brandt, Carsten Pfueller +3
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On…
Residual disorder and diffusion in thin Heusler alloy films
Bernd Jenichen, Jens Herfort, Thomas Hentschel +4
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. T…
Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Uwe Jahn, Jonas Lähnemann, Carsten Pfüller +6
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that opt…
In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films
Bernd Jenichen, Vladimir Kaganer, Wolfgang Braun +3
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and su…