131 citations · 451 across the 20 of their papers we have counts for
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Macro- and micro-strain in GaN nanowires on Si(111)
Bernd Jenichen, Oliver Brandt, Carsten Pfueller +3
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On…
Residual disorder and diffusion in thin Heusler alloy films
Bernd Jenichen, Jens Herfort, Thomas Hentschel +4
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. T…
Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Uwe Jahn, Jonas Lähnemann, Carsten Pfüller +6
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that opt…