activity
20072024
most citedLuminescence of GaAs nanowires consisting of wurtzite and zincblende segments

131 citations · 451 across the 20 of their papers we have counts for

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Showing 2019Show all

8 papers · 1 filter

cond-mat.mtrl-sci2019★ 1 cited

Lattice matched Volmer-Weber growth of FeSi on GaAs(001) -- the influence of the growth rate

B Jenichen, Z Cheng, M Hanke +2

We investigate the formation of lattice matched single-crystalline FeSi/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the e…

cond-mat.mes-hall2019★ 1 cited

Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

B Jenichen, U Jahn, A Nikulin +3

We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a c…

cond-mat.mes-hall2019★ 5 cited

Nucleation at the phase transition near 40~C in MnAs nanodisks

B Jenichen, Y Takagaki, K H Ploog +3

The phase transition near 40~C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the s…

cond-mat.mtrl-sci2019★ 1 cited

Characterization of L21 order in Co2FeSi thin films on GaAs

B Jenichen, T Hentschel, J Herfort +3

Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffr…

cond-mat.mtrl-sci2019

Long-range order and thermal stability of thin CoFeSi films on GaAs(111)B

B Jenichen, J Herfort, K Kumakura +1

CoFeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The CoFeSi fi…

cond-mat.mtrl-sci2019★ 1 cited

Structural properties of CoTiSi films on GaAs(001)

B Jenichen, J Herfort, M Hanke +6

CoTiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray dif…

cond-mat.mtrl-sci2019

Ordered structure of FeGe formed during solid-phase epitaxy

B Jenichen, M Hanke, S Gaucher +7

FeSi/Ge(Fe,Si)/FeSi thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on FeSi). The stacks were analyzed using el…

cond-mat.mtrl-sci2019★ 5 cited

Ab initio and nuclear inelastic scattering studies of FeSi/GaAs heterostructures

O. Sikora, J. Kalt, M. Sternik +11

The structure and dynamical properties of the FeSi/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stabilit…