Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

Abstract

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: firstly, the stripe-laser-like structure that helps intensifying the EL light at the cleaved side walls below the spin injector Fe slab, and secondly, the crystalline AlOx spin tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J = 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent re-absorption, spin-induced birefringence and optical spin-axis conversion are suggested to account for the observed experimental results.

References in corpus (4)

• Analytical Model of Spin-Polarized Semiconductor Lasers
• A spin light emitting diode incorporating ability of electrical helicity switching
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

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